STU60N55F3

new-10%

Manufacturer part number:STU60N55F3

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 55V 80A IPAK

Case Package:SOT-23

Datasheet:STU60N55F3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	STripFET™ III
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Base Part Number	STU60N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	110W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	110W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.5m Ω @ 32A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	50ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	11.5 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	32A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	80A
Drain-source On Resistance-Max	0.0085Ohm
Drain to Source Breakdown Voltage	55V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant