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STU6N65M2

STU6N65M2

STU6N65M2

STMicroelectronics

STMICROELECTRONICS STU6N65M2 Power MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V

SOT-23

STU6N65M2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Weight 3.949996g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 1.2Ohm
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STU6N
Power Dissipation-Max 60W Tc
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.35 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 226pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 9.8nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 6.5 ns
Continuous Drain Current (ID) 4A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.72000 $1.72
75 $1.38987 $104.24025
150 $1.22613 $183.9195
525 $0.96899 $508.71975
1,050 $0.78200 $0.782
2,550 $0.73525 $1.4705
5,025 $0.70253 $3.51265

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