STW200NF03

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Manufacturer part number:STW200NF03

Manufacturer:STMicroelectronics

Description:STW200NF03 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW200NF03 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	STripFET™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Current Rating	120A
Base Part Number	STW200
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Power Dissipation-Max	350W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	350W
Turn On Delay Time	50 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.8m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	10000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	280nC @ 10V
Rise Time	300ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	80 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	120A
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0028Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	480A
Avalanche Energy Rating (Eas)	4000 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free