STW20NB50

new-10%

Manufacturer part number:STW20NB50

Manufacturer:STMicroelectronics

Description:STW20NB50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW20NB50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	20A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STW20N
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	250W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	250m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	25 ns
Continuous Drain Current (ID)	20A
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.25Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	80A
Avalanche Energy Rating (Eas)	1000 mJ
Feedback Cap-Max (Crss)	75 pF
Turn On Time-Max (ton)	57ns
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead