IRF7416TRPBF

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IRF7416TRPBF

Manufacturer part number:IRF7416TRPBF

Manufacturer:Infineon Technologies

Description:IRF7416TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF7416TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	20mOhm
Additional Feature	ULTRA LOW RESISTANCE
Voltage - Rated DC	-30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-10A
Number of Elements	1
Row Spacing	6.3 mm
Number of Channels	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	18 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Ta
Gate Charge (Qg) (Max) @ Vgs	92nC @ 10V
Rise Time	49ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	59 ns
Continuous Drain Current (ID)	-10A
Threshold Voltage	-2.04V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	45A
Dual Supply Voltage	-30V
Avalanche Energy Rating (Eas)	370 mJ
Recovery Time	85 ns
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-20 V
Height	1.75mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free