Name: STW26NM60
Brand: STMicroelectronics
SKU: STW26NM60
Availability: InStock

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STW26NM60

Manufacturer part number:STW26NM60

Manufacturer:STMicroelectronics

Description:STW26NM60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW26NM60 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	MDmesh™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	135mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	30A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STW26N
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	313W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	313W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	135m Ω @ 13A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	102nC @ 10V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	26A
Drain to Source Breakdown Voltage	600V
Avalanche Energy Rating (Eas)	740 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STW26NM60 Product Details

STW26NM60 Description

The STW26NM60 is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.