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STW30NM60D

STW30NM60D

STW30NM60D

STMicroelectronics

STW30NM60D datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STW30NM60D Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 30A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW30N
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Voltage 600V
Power Dissipation-Max 312W Tc
Element Configuration Single
Current 34A
Operating Mode ENHANCEMENT MODE
Power Dissipation 312W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 145m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2520pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 115nC @ 10V
Rise Time 33ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 30A
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.145Ohm
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 740 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
600 $9.28750 $5572.5
STW30NM60D Product Details

STW30NM60D Description


STW30NM60D is 600v N-channel Fast diode MDmesh? Power MOSFET. The FDmesh? associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, particularly ZVS phase-shift converters. The operating junction and storage temperature are between -55 and 150℃. The MOSFET STW30NM60D is in the TO-247 package with 312W power dissipation. 



STW30NM60D Features


  • High dv/dt and avalanche capabilities

  • 100% avalanche rated

  • Low input capacitance and gate charge

  • Low gate input resistance

  • Fast internal recovery diode



STW30NM60D Applications


  • Rotary Switch

  • DIP Switch

  • Limit Switch

  • Reed Switch

  • Rocker Switch

  • Toggle Switch


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