CSD25302Q2

new-10%

Manufacturer part number:CSD25302Q2

Manufacturer:Texas Instruments

Description:MOSFET PCh NexFET Pwr MOSFET

Case Package:SOT-23

Datasheet:CSD25302Q2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
Base Part Number	CSD25302
Pin Count	6
Number of Elements	1
Power Dissipation-Max	2.4W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.4W
Case Connection	SOURCE
Turn On Delay Time	3.2 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	49m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 10V
Current - Continuous Drain (Id) @ 25°C	5A Tc
Gate Charge (Qg) (Max) @ Vgs	3.4nC @ 4.5V
Rise Time	13.2ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	1.3 ns
Turn-Off Delay Time	8.6 ns
Continuous Drain Current (ID)	5A
Threshold Voltage	-650mV
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	5A
Drain-source On Resistance-Max	0.092Ohm
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	20A
Nominal Vgs	-650 mV
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead