IRL2910SPBF

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Manufacturer part number:IRL2910SPBF

Manufacturer:Infineon Technologies

Description:IRL2910SPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRL2910SPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2003
Series	HEXFET®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	3.8W Ta 200W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	26m Ω @ 29A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	55A Tc
Gate Charge (Qg) (Max) @ Vgs	140nC @ 5V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±16V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$5.933449	$5.933449
10	$5.597593	$55.97593
100	$5.280748	$528.0748
500	$4.981838	$2490.919
1000	$4.699847	$4699.847

STP60N55F3 Description

STP60N55F3 is a 55v N-channel STripFET? III Power MOSFET. This STripFET? III Power MOSFET STP60N55F3 technology is among the latest improvements, which have been specially tailored to minimize on-state resistance providing superior switching performances. The operating junction and storage temperature are between -55 and 175℃. The MOSFET STP60N55F3 is in the TO-220 package with 110W power dissipation.