STW55NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STW55NM60ND Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
FDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
60MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STW55N
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
350W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
350W
Turn On Delay Time
33 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
60m Ω @ 25.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5800pF @ 50V
Current - Continuous Drain (Id) @ 25°C
51A Tc
Gate Charge (Qg) (Max) @ Vgs
190nC @ 10V
Rise Time
68ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
96 ns
Turn-Off Delay Time
188 ns
Continuous Drain Current (ID)
51A
Threshold Voltage
4V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
204A
Avalanche Energy Rating (Eas)
850 mJ
Max Junction Temperature (Tj)
150°C
Height
24.45mm
Length
15.75mm
Width
5.15mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$21.52000
$21.52
30
$18.34100
$550.23
120
$16.98058
$2037.6696
STW55NM60ND Product Details
STW55NM60ND Description
The STW55NM60ND is an FDmesh? N-channel Power MOSFET featuring low input capacitance and gate charge. This FDmesh? II Power MOSFET STW55NM60ND with intrinsic fast-recovery body diode is produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
STW55NM60ND Features
The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247