STW55NM60ND

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Manufacturer part number:STW55NM60ND

Manufacturer:STMicroelectronics

Description:STW55NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW55NM60ND Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	FDmesh™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	60MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STW55N
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	350W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	350W
Turn On Delay Time	33 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 25.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5800pF @ 50V
Current - Continuous Drain (Id) @ 25°C	51A Tc
Gate Charge (Qg) (Max) @ Vgs	190nC @ 10V
Rise Time	68ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	96 ns
Turn-Off Delay Time	188 ns
Continuous Drain Current (ID)	51A
Threshold Voltage	4V
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	204A
Avalanche Energy Rating (Eas)	850 mJ
Max Junction Temperature (Tj)	150°C
Height	24.45mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free