STW70N60DM6 Description

These MDmesh DM6 fast-recovery diode series high-voltage N-channel Power MOSFETs. In comparison to the previous MDmesh fast generation, DM6 offers one of the most efficient switching behaviors on the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters, along with very low recovery charge (Qrr), recovery time (trr), and excellent improvements in RDS(on) per area.

STW70N60DM6 Features

• Fast-recovery body diode

• Lower RDS(on) per area vs previous generation

• Low gate charge, input capacitance and resistance

• 100% avalanche tested

• Extremely high dv/dt ruggedness

• Zener-protected

STW70N60DM6 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial