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STW77N65M5

STW77N65M5

STW77N65M5

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 38m Ω @ 34.5A, 10V 9800pF @ 100V 200nC @ 10V TO-247-3

SOT-23

STW77N65M5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh™ V
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 38mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STW77N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 400W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 400W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 38m Ω @ 34.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9800pF @ 100V
Current - Continuous Drain (Id) @ 25°C 69A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 69A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 276A
Avalanche Energy Rating (Eas) 2000 mJ
Height 20.15mm
Length 15.75mm
Width 5.15mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $22.92000 $22.92
30 $19.27133 $578.1399
120 $17.70892 $2125.0704
510 $15.10465 $7703.3715
STW77N65M5 Product Details

STW77N65M5 Description


This product is an N-channel MDmeshTM V Power MOSFET that combines STMicroelectronics' renowned PowerMESHTM horizontal layout structure with an inventive, patented vertical manufacturing method. The resulting product is especially well suited for applications that need excellent power density and exceptional efficiency due to its extraordinarily low onresistance, which is unmatched among silicon-based Power MOSFETs.



STW77N65M5 Features


  • Higher VDSS rating

  • Higher dv/dt capability

  • Excellent switching performance

  • Easy to drive

  • 100% avalanche tested



STW77N65M5 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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