Name: STW77N65M5
Brand: STMicroelectronics
SKU: STW77N65M5
Price: 18.58000 USD
Availability: InStock

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STW77N65M5

Manufacturer part number:STW77N65M5

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 38m Ω @ 34.5A, 10V 9800pF @ 100V 200nC @ 10V TO-247-3

Case Package:SOT-23

Datasheet:STW77N65M5 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Factory Lead Time	17 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ V
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	38mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STW77N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	400W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	400W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	38m Ω @ 34.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	9800pF @ 100V
Current - Continuous Drain (Id) @ 25°C	69A Tc
Gate Charge (Qg) (Max) @ Vgs	200nC @ 10V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Fall Time (Typ)	20 ns
Continuous Drain Current (ID)	69A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	276A
Avalanche Energy Rating (Eas)	2000 mJ
Height	20.15mm
Length	15.75mm
Width	5.15mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STW77N65M5 Product Details

STW77N65M5 Description

This product is an N-channel MDmeshTM V Power MOSFET that combines STMicroelectronics' renowned PowerMESHTM horizontal layout structure with an inventive, patented vertical manufacturing method. The resulting product is especially well suited for applications that need excellent power density and exceptional efficiency due to its extraordinarily low onresistance, which is unmatched among silicon-based Power MOSFETs.