SI4108DY-T1-GE3

new-10%

Manufacturer part number:SI4108DY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 75V 20.5A 7.8W 9.8mohm @ 10V

Case Package:SOT-23

Datasheet:SI4108DY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Packaging	Cut Tape (CT)
Published	2017
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	7.8W
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power Dissipation	7.8W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.8m Ω @ 13.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2100pF @ 38V
Current - Continuous Drain (Id) @ 25°C	20.5A Tc
Gate Charge (Qg) (Max) @ Vgs	54nC @ 10V
Rise Time	11ns
Fall Time (Typ)	9 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	20.5A
JEDEC-95 Code	MS-012AA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	75V
Pulsed Drain Current-Max (IDM)	60A
Avalanche Energy Rating (Eas)	51.2 mJ
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant