STW88N65M5

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Manufacturer part number:STW88N65M5

Manufacturer:STMicroelectronics

Description:STW88N65M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW88N65M5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ V
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	24mOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STW88N
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	450W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	450W
Case Connection	DRAIN
Turn On Delay Time	141 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	29m Ω @ 42A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8825pF @ 100V
Current - Continuous Drain (Id) @ 25°C	84A Tc
Gate Charge (Qg) (Max) @ Vgs	204nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Turn-Off Delay Time	141 ns
Continuous Drain Current (ID)	84A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	650V
Avalanche Energy Rating (Eas)	2000 mJ
Max Junction Temperature (Tj)	150°C
Nominal Vgs	4 V
Height	24.45mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free