STX13004 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
STX13004 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
2.5W
Terminal Position
BOTTOM
Terminal Form
WIRE
Base Part Number
STX13004
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.5W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 1A 5V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1V @ 500mA, 2A
Collector Emitter Breakdown Voltage
400V
Emitter Base Voltage (VEBO)
9V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
STX13004 Product Details
STX13004 Overview
In this device, the DC current gain is 10 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 500mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.In extreme cases, the collector current can be as low as 2A volts.
STX13004 Features
the DC current gain for this device is 10 @ 1A 5V the vce saturation(Max) is 1V @ 500mA, 2A the emitter base voltage is kept at 9V
STX13004 Applications
There are a lot of STMicroelectronics STX13004 applications of single BJT transistors.