STX13004G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
STX13004G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
2.5W
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STX13004
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.5W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 1A 5V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1V @ 500mA, 2A
Collector Emitter Breakdown Voltage
400V
Emitter Base Voltage (VEBO)
9V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
STX13004G Product Details
STX13004G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 1A 5V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 500mA, 2A.The base voltage of the emitter can be kept at 9V to achieve high efficiency.In extreme cases, the collector current can be as low as 2A volts.
STX13004G Features
the DC current gain for this device is 10 @ 1A 5V the vce saturation(Max) is 1V @ 500mA, 2A the emitter base voltage is kept at 9V
STX13004G Applications
There are a lot of STMicroelectronics STX13004G applications of single BJT transistors.