STX13005G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
STX13005G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
2.8W
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STX13005
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.8W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 2A 5V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
5V @ 750mA, 3A
Collector Emitter Breakdown Voltage
400V
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
9V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
STX13005G Product Details
STX13005G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 8 @ 2A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 5V @ 750mA, 3A.An emitter's base voltage can be kept at 9V to gain high efficiency.When collector current reaches its maximum, it can reach 3A volts.
STX13005G Features
the DC current gain for this device is 8 @ 2A 5V the vce saturation(Max) is 5V @ 750mA, 3A the emitter base voltage is kept at 9V
STX13005G Applications
There are a lot of STMicroelectronics STX13005G applications of single BJT transistors.