BSP50 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BSP50 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
39 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
188mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
800mA
Base Part Number
BSP50
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 500mA 10V
Current - Collector Cutoff (Max)
50nA
Vce Saturation (Max) @ Ib, Ic
1.3V @ 500μA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
1.3V
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
2000
Height
1.6mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
4,000
$0.15021
$0.60084
8,000
$0.14110
$1.1288
12,000
$0.13200
$1.584
28,000
$0.12138
$3.39864
BSP50 Product Details
BSP50 Overview
DC current gain in this device equals 2000 @ 500mA 10V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.3V, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.3V @ 500μA, 500mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 800mA.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BSP50 Features
the DC current gain for this device is 2000 @ 500mA 10V a collector emitter saturation voltage of 1.3V the vce saturation(Max) is 1.3V @ 500μA, 500mA the emitter base voltage is kept at 5V the current rating of this device is 800mA a transition frequency of 200MHz
BSP50 Applications
There are a lot of ON Semiconductor BSP50 applications of single BJT transistors.