STY100NS20FD

new-10%

STY100NS20FD

Manufacturer part number:STY100NS20FD

Manufacturer:STMicroelectronics

Description:STY100NS20FD datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STY100NS20FD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	247
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MESH OVERLAY™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	100A
Base Part Number	STY100
Pin Count	3
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Power Dissipation-Max	450W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	450W
Turn On Delay Time	42 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	24m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	360nC @ 10V
Rise Time	140ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	140 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.024Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	750 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free