STY145N65M5

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Manufacturer part number:STY145N65M5

Manufacturer:STMicroelectronics

Description:STY145N65M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STY145N65M5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	247
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ V
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STY145
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Power Dissipation-Max	625W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	625W
Turn On Delay Time	255 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15m Ω @ 69A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	18500pF @ 100V
Current - Continuous Drain (Id) @ 25°C	138A Tc
Gate Charge (Qg) (Max) @ Vgs	414nC @ 10V
Rise Time	11ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	82 ns
Turn-Off Delay Time	88 ns
Continuous Drain Current (ID)	138A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	710V
Pulsed Drain Current-Max (IDM)	552A
Avalanche Energy Rating (Eas)	2420 mJ
Height	20.3mm
Length	15.9mm
Width	5.3mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free