SI1308EDL-T1-GE3

new-10%

Manufacturer part number:SI1308EDL-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY - SI1308EDL-T1-GE3 - Power MOSFET, N Channel, 30 V, 1.4 A, 0.11 ohm, SOT-323, Surface Mount

Case Package:SOT-23

Datasheet:SI1308EDL-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Number of Pins	3
Weight	124.596154mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	132mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	400mW Ta 500mW Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	400mW
Turn On Delay Time	2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	132m Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	105pF @ 15V
Current - Continuous Drain (Id) @ 25°C	1.4A Tc
Gate Charge (Qg) (Max) @ Vgs	4.1nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	1.5A
Threshold Voltage	600mV
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Max Junction Temperature (Tj)	150°C
Height	1.1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free