SIHG22N50D-GE3

new-10%

Manufacturer part number:SIHG22N50D-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY SIHG22N50D-GE3 MOSFET Transistor, N Channel, 22 A, 500 V, 0.185 ohm, 10 V, 3 V

Case Package:SOT-23

Datasheet:SIHG22N50D-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	312W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	312W
Case Connection	DRAIN
Turn On Delay Time	21 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	230m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1938pF @ 100V
Current - Continuous Drain (Id) @ 25°C	22A Tc
Gate Charge (Qg) (Max) @ Vgs	98nC @ 10V
Rise Time	42ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	47 ns
Continuous Drain Current (ID)	22A
Threshold Voltage	3V
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	67A
DS Breakdown Voltage-Min	500V
Height	20.82mm
Length	15.87mm
Width	5.31mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant