BAV21W-G RHG

new-10%

Manufacturer part number:BAV21W-G RHG

Manufacturer:Taiwan Semiconductor Corporation

Description:DIODE GEN PURP 200V 200MA SOD123

Case Package:SOT-23

Datasheet:BAV21W-G RHG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	SOD-123
Surface Mount	YES
Diode Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2016
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
HTS Code	8541.10.00.70
Terminal Position	DUAL
Terminal Form	GULL WING
JESD-30 Code	R-PDSO-G2
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE
Power Dissipation-Max	0.5W
Speed	Small Signal =< 200mA (Io), Any Speed
Diode Type	Standard
Current - Reverse Leakage @ Vr	100nA @ 200V
Voltage - Forward (Vf) (Max) @ If	1.25V @ 200mA
Operating Temperature - Junction	-65°C~150°C
Output Current-Max	0.2A
Voltage - DC Reverse (Vr) (Max)	200V
Current - Average Rectified (Io)	200mA
Reverse Recovery Time	50ns
Rep Pk Reverse Voltage-Max	250V
Capacitance @ Vr, F	5pF @ 0V 1MHz
RoHS Status	ROHS3 Compliant