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BAV21W-G RHG

BAV21W-G RHG

BAV21W-G RHG

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 200MA SOD123

SOT-23

BAV21W-G RHG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case SOD-123
Surface Mount YES
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.70
Terminal Position DUAL
Terminal Form GULL WING
JESD-30 Code R-PDSO-G2
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 0.5W
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 100nA @ 200V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 200mA
Operating Temperature - Junction -65°C~150°C
Output Current-Max 0.2A
Voltage - DC Reverse (Vr) (Max) 200V
Current - Average Rectified (Io) 200mA
Reverse Recovery Time 50ns
Rep Pk Reverse Voltage-Max 250V
Capacitance @ Vr, F 5pF @ 0V 1MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.236000 $0.236
10 $0.222642 $2.22642
100 $0.210039 $21.0039
500 $0.198150 $99.075
1000 $0.186934 $186.934

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