TN6729A_D26Z Overview
This device has a DC current gain of 50 @ 250mA 1V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 250mA.Emitter base voltages of 5V can achieve high levels of efficiency.There is no device package available from the supplier for this product.The device has a 80V maximal voltage - Collector Emitter Breakdown.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
TN6729A_D26Z Features
the DC current gain for this device is 50 @ 250mA 1V
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 5V
the supplier device package of TO-226
TN6729A_D26Z Applications
There are a lot of ON Semiconductor TN6729A_D26Z applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
