BCR116E6393HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCR116E6393HTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
200mW
Power - Max
200mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 5mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
50V
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
150MHz
RoHS Status
ROHS3 Compliant
BCR116E6393HTSA1 Product Details
BCR116E6393HTSA1 Overview
In this device, the DC current gain is 70 @ 5mA 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 500μA, 10mA.Supplier package SOT-23-3 contains the product.This device displays a 50V maximum voltage - Collector Emitter Breakdown.The maximum collector current is 100mA volts.
BCR116E6393HTSA1 Features
the DC current gain for this device is 70 @ 5mA 5V the vce saturation(Max) is 300mV @ 500μA, 10mA the supplier device package of SOT-23-3
BCR116E6393HTSA1 Applications
There are a lot of Infineon Technologies BCR116E6393HTSA1 applications of single BJT transistors.