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BCR116E6393HTSA1

BCR116E6393HTSA1

BCR116E6393HTSA1

Infineon Technologies

BCR116E6393HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCR116E6393HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Power - Max 200mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 150MHz
RoHS Status ROHS3 Compliant
BCR116E6393HTSA1 Product Details

BCR116E6393HTSA1 Overview


In this device, the DC current gain is 70 @ 5mA 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 500μA, 10mA.Supplier package SOT-23-3 contains the product.This device displays a 50V maximum voltage - Collector Emitter Breakdown.The maximum collector current is 100mA volts.

BCR116E6393HTSA1 Features


the DC current gain for this device is 70 @ 5mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the supplier device package of SOT-23-3

BCR116E6393HTSA1 Applications


There are a lot of Infineon Technologies BCR116E6393HTSA1 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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