BC846A RFG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
BC846A RFG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
200mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
65V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.152059
$0.152059
10
$0.143452
$1.43452
100
$0.135331
$13.5331
500
$0.127672
$63.836
1000
$0.120445
$120.445
BC846A RFG Product Details
BC846A RFG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 100mA.Single BJT transistor comes in a supplier device package of SOT-23.The device exhibits a collector-emitter breakdown at 65V.
BC846A RFG Features
the DC current gain for this device is 110 @ 2mA 5V the vce saturation(Max) is 500mV @ 5mA, 100mA the supplier device package of SOT-23
BC846A RFG Applications
There are a lot of Taiwan Semiconductor Corporation BC846A RFG applications of single BJT transistors.