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TSM4N80CI C0G

  • TSM4N80CI C0G
  • TSM4N80CI C0G

TSM4N80CI C0G

TSM4N80CI C0G

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 800V 4A ITO220

SOT-23

TSM4N80CI C0G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 38.7W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3 Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 955pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.01000 $2.01
10 $1.81200 $18.12
100 $1.45640 $145.64
500 $1.13278 $566.39
1,000 $0.93859 $0.93859
3,000 $0.90622 $2.71866

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