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TSM4N80CZ C0G

  • TSM4N80CZ C0G
  • TSM4N80CZ C0G

TSM4N80CZ C0G

TSM4N80CZ C0G

Taiwan Semiconductor Corporation

MOSFET (Metal Oxide) N-Channel Tube 3Ohm @ 1.2A, 10V ±30V 955pF @ 25V 20nC @ 10V 800V TO-220-3

SOT-23

TSM4N80CZ C0G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 38.7W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 955pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.71000 $1.71
10 $1.54300 $15.43
100 $1.23980 $123.98
500 $0.96426 $482.13
1,000 $0.79895 $0.79895
3,000 $0.77140 $2.3142
TSM4N80CZ C0G Product Details

TSM4N80CZ C0G Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 955pF @ 25V.In order to operate this transistor, a voltage of 800V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

TSM4N80CZ C0G Features


a 800V drain to source voltage (Vdss)


TSM4N80CZ C0G Applications


There are a lot of Taiwan Semiconductor Corporation
TSM4N80CZ C0G applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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