SI8407DB-T2-E1

new-10%

Manufacturer part number:SI8407DB-T2-E1

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 5.8A 2X2 6-MFP

Case Package:SOT-23

Datasheet:SI8407DB-T2-E1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-MICRO FOOT®CSP
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	27mOhm
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	BALL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Power Dissipation-Max	1.47W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.47W
Turn On Delay Time	30 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 350μA
Current - Continuous Drain (Id) @ 25°C	5.8A Ta
Gate Charge (Qg) (Max) @ Vgs	50nC @ 4.5V
Rise Time	45ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	45 ns
Turn-Off Delay Time	520 ns
Continuous Drain Current (ID)	-8.2A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	5.8A
Drain to Source Breakdown Voltage	-20V
Height	355.6μm
Length	2.3876mm
Width	2.0066mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free