2SK4016(Q)

new-10%

Manufacturer part number:2SK4016(Q)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 600V 13A TO220SIS

Case Package:SOT-23

Datasheet:2SK4016(Q) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2007
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	Through Hole
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	50W Tc
Element Configuration	Single
Power Dissipation	50W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	500m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	3100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	13A Ta
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Rise Time	60ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	50 ns
Continuous Drain Current (ID)	13A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Dual Supply Voltage	600V
Nominal Vgs	4 V
Height	8.1mm
Length	10mm
Width	4.5mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free