TSM60N900CI C0G Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 81 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 480pF @ 100V.4.5A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 13.5A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

TSM60N900CI C0G Features

the avalanche energy rating (Eas) is 81 mJ
based on its rated peak drain current 13.5A.
a 600V drain to source voltage (Vdss)

TSM60N900CI C0G Applications

There are a lot of Taiwan Semiconductor Corporation
TSM60N900CI C0G applications of single MOSFETs transistors.

• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification