TSM650P02CX RFG

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Manufacturer part number:TSM650P02CX RFG

Manufacturer:Taiwan Semiconductor Corporation

Description:MOSFET (Metal Oxide) P-Channel Digi-Reel® 65m Ω @ 3A, 4.5V ±10V 515pF @ 10V 5.1nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3

Case Package:SOT-23

Datasheet:TSM650P02CX RFG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Operating Temperature	150°C TJ
Packaging	Digi-Reel®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1.56W Tc
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	65m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	515pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4.1A Tc
Gate Charge (Qg) (Max) @ Vgs	5.1nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±10V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$2.753862	$2.753862
10	$2.597983	$25.97983
100	$2.450927	$245.0927
500	$2.312196	$1156.098
1000	$2.181317	$2181.317

TSM650P02CX RFG Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 515pF @ 10V.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).