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TSM6N50CH C5G

TSM6N50CH C5G

TSM6N50CH C5G

Taiwan Semiconductor Corporation

MOSFET N-CH 500V 5.6A TO251

SOT-23

TSM6N50CH C5G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TO-251 (IPAK)
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 90W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.6A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant

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