SI1315DL-T1-GE3

new-10%

Manufacturer part number:SI1315DL-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 8V 0.9A SC70-3

Case Package:SOT-23

Datasheet:SI1315DL-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Number of Pins	3
Weight	124.596154mg
Transistor Element Material	SILICON
Operating Temperature	-50°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	336mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	3
Number of Elements	1
Power Dissipation-Max	300mW Ta 400mW Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	10 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	336m Ω @ 800mA, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	112pF @ 4V
Current - Continuous Drain (Id) @ 25°C	900mA Tc
Gate Charge (Qg) (Max) @ Vgs	3.4nC @ 4.5V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	-900mA
Threshold Voltage	-400mV
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	0.9A
Drain to Source Breakdown Voltage	-8V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free