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CSD13201W10

CSD13201W10

CSD13201W10

Texas Instruments

CSD13201W10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

SOT-23

CSD13201W10 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-UFBGA, DSBGA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD13201
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.2W
Turn On Delay Time 3.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 34m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 462pF @ 6V
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 4.5V
Rise Time 5.9ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 9.7 ns
Turn-Off Delay Time 14.4 ns
Continuous Drain Current (ID) 1.6A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.053Ohm
Drain to Source Breakdown Voltage 12V
Pulsed Drain Current-Max (IDM) 20.2A
Feedback Cap-Max (Crss) 22.6 pF
Height 625μm
Length 0m
Width 0m
Thickness 650μm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.13860 $0.4158
6,000 $0.13020 $0.7812
15,000 $0.12180 $1.827
CSD13201W10 Product Details

CSD13201W10 Description


CSD13201W10 emerges as a member of the family of N-channel NexFET? power MOSFET. It is able to provide ultra-low Qg and Qgd, as well as a gate-source voltage clamp. It is specifically designed to offer low on-state resistance and low gate charge in a low profile while ensuring good thermal characteristics.



CSD13201W10 Features


  • Extremely low Qg and Qgd

  • Small footprint 1mm × 1mm

  • Low profile 0.62mm height

  • Gate-source voltage clamp

  • Supplied in the 1 × 1 Wafer-level package



CSD13201W10 Applications


  • Load switch

  • Battery protection

  • Battery management


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