CSD13201W10

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CSD13201W10

Manufacturer part number:CSD13201W10

Manufacturer:Texas Instruments

Description:CSD13201W10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD13201W10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Contact Plating	Copper, Silver, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-UFBGA, DSBGA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	BALL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD13201
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.2W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.2W
Turn On Delay Time	3.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	34m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	462pF @ 6V
Current - Continuous Drain (Id) @ 25°C	1.6A Ta
Gate Charge (Qg) (Max) @ Vgs	2.9nC @ 4.5V
Rise Time	5.9ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	9.7 ns
Turn-Off Delay Time	14.4 ns
Continuous Drain Current (ID)	1.6A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.053Ohm
Drain to Source Breakdown Voltage	12V
Pulsed Drain Current-Max (IDM)	20.2A
Feedback Cap-Max (Crss)	22.6 pF
Height	625μm
Length	0m
Width	0m
Thickness	650μm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free