FQPF18N20V2YDTU

new-10%

Manufacturer part number:FQPF18N20V2YDTU

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 200V 18A TO-220F

Case Package:SOT-23

Datasheet:FQPF18N20V2YDTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Formed Leads
Number of Pins	3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2002
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	40W Tc
Element Configuration	Single
Power Dissipation	40W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	140m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1080pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Tc
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Rise Time	133ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	62 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	18A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	200V
RoHS Status	RoHS Compliant