SPW20N60CFDFKSA1

new-10%

Manufacturer part number:SPW20N60CFDFKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 650V 20.7A TO-247

Case Package:SOT-23

Datasheet:SPW20N60CFDFKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	650V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	20.7A
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	208W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	35W
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	220m Ω @ 13.1A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20.7A Tc
Gate Charge (Qg) (Max) @ Vgs	124nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	6.4 ns
Turn-Off Delay Time	59 ns
Continuous Drain Current (ID)	20.7A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	600V
Drain-source On Resistance-Max	0.22Ohm
Pulsed Drain Current-Max (IDM)	52A
Avalanche Energy Rating (Eas)	690 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free