CSD17382F4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website
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CSD17382F4 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
FemtoFET™
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Terminal Form
NO LEAD
Base Part Number
CSD17382
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Case Connection
DRAIN
Turn On Delay Time
59 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
64m Ω @ 500mA, 8V
Vgs(th) (Max) @ Id
1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
347pF @ 15V
Current - Continuous Drain (Id) @ 25°C
2.3A Ta
Gate Charge (Qg) (Max) @ Vgs
2.7nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 8V
Turn-Off Delay Time
279 ns
Continuous Drain Current (ID)
2.3A
Gate to Source Voltage (Vgs)
10V
Max Junction Temperature (Tj)
150°C
Height
350μm
Length
1.035mm
Width
635μm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
CSD17382F4 Product Details
CSD17382F4 Description
CSD17382F4 is a type of N-Channel FemtoFET? MOSFET optimized for load switch applications and general-purpose switching applications. It is specifically designed and optimized to minimize the footprint in many handheld and mobile applications. Based on the unique technology, CSD17382F4 is able to replace standard small signal MOSFETs while providing at least a 60% reduction in footprint size.