CSD17551Q3A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website
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CSD17551Q3A Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
NexFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Base Part Number
CSD17551
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Power Dissipation-Max
2.6W Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.6W
Case Connection
DRAIN
Turn On Delay Time
8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9m Ω @ 11A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1370pF @ 15V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
7.8nC @ 4.5V
Rise Time
24ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
3.4 ns
Turn-Off Delay Time
12 ns
Continuous Drain Current (ID)
12A
Threshold Voltage
1.6V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
1.6 V
Height
900μm
Length
3.3mm
Width
3.3mm
Thickness
800μm
Radiation Hardening
No
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.287349
$1.287349
10
$1.214480
$12.1448
100
$1.145736
$114.5736
500
$1.080883
$540.4415
1000
$1.019701
$1019.701
CSD17551Q3A Product Details
CSD17551Q3A Description
CSD17551Q3A is a 30V N channel NexFET? power MOSFET. This 30 V, 7.8 mΩ, 3.3 mm × 3.3 mm NexFET power MOSFET CSD17551Q3A is designed to minimize losses in power conversion applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor CSD17551Q3A is in the VSONP-8 package with 2.6W power dissipation.
CSD17551Q3A Features
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free
RoHS Compliant
Halogen Free
SON 3.3 mm × 3.3 mm Plastic Package
CSD17551Q3A Applications
Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems