CSD17553Q5A

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CSD17553Q5A

Manufacturer part number:CSD17553Q5A

Manufacturer:Texas Instruments

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.1m Ω @ 20A, 10V ±20V 3252pF @ 15V 21.5nC @ 4.5V 30V 8-PowerTDFN

Case Package:SOT-23

Datasheet:CSD17553Q5A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD17553
Number of Elements	1
Power Dissipation-Max	3.1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.1W
Case Connection	DRAIN
Turn On Delay Time	9.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.1m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	1.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3252pF @ 15V
Current - Continuous Drain (Id) @ 25°C	23.5A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	21.5nC @ 4.5V
Rise Time	17ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5.2 ns
Turn-Off Delay Time	14.8 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	23.5A
Drain-source On Resistance-Max	0.004Ohm
DS Breakdown Voltage-Min	30V
Feedback Cap-Max (Crss)	60 pF
Height	1.1mm
Length	4.9mm
Width	6mm
Thickness	1mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead