CSD18531Q5A

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CSD18531Q5A

Manufacturer part number:CSD18531Q5A

Manufacturer:Texas Instruments

Description:CSD18531Q5A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD18531Q5A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 10 hours ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
Base Part Number	CSD18531
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.1W Ta 156W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	156W
Case Connection	DRAIN
Turn On Delay Time	4.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.6m Ω @ 22A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3840pF @ 30V
Current - Continuous Drain (Id) @ 25°C	19A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Rise Time	7.8ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	2.7 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	100A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	224 mJ
Max Junction Temperature (Tj)	175°C
Nominal Vgs	1.8 V
Height	1.1mm
Length	4.9mm
Width	6mm
Thickness	1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant