CSD18532NQ5B

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Manufacturer part number:CSD18532NQ5B

Manufacturer:Texas Instruments

Description:CSD18532NQ5B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD18532NQ5B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
Base Part Number	CSD18532
Number of Elements	1
Power Dissipation-Max	3.2W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.2W
Case Connection	DRAIN
Turn On Delay Time	8.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	3.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5340pF @ 30V
Current - Continuous Drain (Id) @ 25°C	22A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	64nC @ 10V
Rise Time	8.7ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	2.7 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	22A
Drain-source On Resistance-Max	0.0044Ohm
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	360 mJ
Length	5mm
Width	6mm
Thickness	950μm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead