CSD19534Q5AT

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CSD19534Q5AT

Manufacturer part number:CSD19534Q5AT

Manufacturer:Texas Instruments

Description:CSD19534Q5AT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD19534Q5AT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Weight	24.012046mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD19534
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.2W Ta 63W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.2W
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15.1m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	3.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1680pF @ 50V
Current - Continuous Drain (Id) @ 25°C	50A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	44A
Threshold Voltage	2.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Avalanche Energy Rating (Eas)	55 mJ
Max Junction Temperature (Tj)	150°C
Feedback Cap-Max (Crss)	7.4 pF
Height	1.1mm
Length	4.9mm
Width	6mm
Thickness	1mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead