CSD19537Q3T

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CSD19537Q3T

Manufacturer part number:CSD19537Q3T

Manufacturer:Texas Instruments

Description:MOSFET N-CH 100V 50A 8VSON

Case Package:SOT-23

Datasheet:CSD19537Q3T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Contact Plating	Copper, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Resistance	12.1mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Reach Compliance Code	not_compliant
Base Part Number	CSD19537
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 83W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	3.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1680pF @ 50V
Current - Continuous Drain (Id) @ 25°C	50A Ta
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	3ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	50A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9.7A
Pulsed Drain Current-Max (IDM)	219A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	55 mJ
Feedback Cap-Max (Crss)	17.3 pF
Length	3.3mm
Width	3.3mm
Thickness	1mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead