SI7884BDP-T1-GE3

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SI7884BDP-T1-GE3

Manufacturer part number:SI7884BDP-T1-GE3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 40V 18.5A 8-Pin PowerPAK SO T/R

Case Package:SOT-23

Datasheet:SI7884BDP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	7.5mOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	R-XDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	4.6W Ta 46W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	4.6W
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.5m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3540pF @ 20V
Current - Continuous Drain (Id) @ 25°C	58A Tc
Gate Charge (Qg) (Max) @ Vgs	77nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	58A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	50A
Avalanche Energy Rating (Eas)	54 mJ
Height	1.04mm
Length	4.9mm
Width	5.89mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free