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FDD6670A

FDD6670A

FDD6670A

ON Semiconductor

N-Channel Tape & Reel (TR) 8m Ω @ 15A, 10V ±20V 1755pF @ 15V 22nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

FDD6670A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 16 hours ago)
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 8MOhm
Additional Feature FAST SWITCHING
Voltage - Rated DC 30V
Terminal Form GULL WING
Current Rating 66A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.2W Ta 63W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1755pF @ 15V
Current - Continuous Drain (Id) @ 25°C 15A Ta 66A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 66A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 67 mJ
Nominal Vgs 1.8 V
Height 2.39mm
Length 6.73mm
Width 6.22mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.68574 $1.37148
5,000 $0.65335 $3.26675
12,500 $0.63021 $7.56252
FDD6670A Product Details

FDD6670A Description


The FDD6670A is an N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. The onsemi FDD6670A has been optimized for low gate charge, low RDS (ON), fast switching speed, and extremely low RDS (ON) in a small package.



FDD6670A Features


  • 66 A, 30 V

  • RDS(on) = 8 mΩ @ VGS = 10 V

  • RDS(on) = 10 mΩ @ VGS = 4.5 V

  • Low gate charge

  • Fast switching speed

  • High-performance trench technology for extremely low RDS(on)



FDD6670A Applications


  • DC/DC cornverter

  • Motor Drives

  • Cellular phones 

  • Laptop computers

  • Photovoltaic systems 

  • Wind turbines


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