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CSD23382F4T

CSD23382F4T

CSD23382F4T

Texas Instruments

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 76m Ω @ 500mA, 4.5V ±8V 235pF @ 6V 1.35nC @ 4.5V 12V 3-XFDFN

SOT-23

CSD23382F4T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 6 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series FemtoFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD23382
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 28 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 76m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 235pF @ 6V
Current - Continuous Drain (Id) @ 25°C 3.5A Ta
Gate Charge (Qg) (Max) @ Vgs 1.35nC @ 4.5V
Rise Time 25ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 66 ns
Continuous Drain Current (ID) -3.5A
Threshold Voltage -800mV
Gate to Source Voltage (Vgs) -800mV
Length 1.035mm
Width 635μm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
250 $0.19140 $47.85
500 $0.15840 $79.2
750 $0.13200 $99
CSD23382F4T Product Details

CSD23382F4T Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 235pF @ 6V.This device conducts a continuous drain current (ID) of -3.5A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 66 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 28 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be -800mV.Activation of any electrical operation happens at threshold voltage, and this transistor has -800mV threshold voltage.This transistor requires a drain-source voltage (Vdss) of 12V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).

CSD23382F4T Features


a continuous drain current (ID) of -3.5A
the turn-off delay time is 66 ns
a threshold voltage of -800mV
a 12V drain to source voltage (Vdss)


CSD23382F4T Applications


There are a lot of Texas Instruments
CSD23382F4T applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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