CSD25213W10

new-10%

Manufacturer part number:CSD25213W10

Manufacturer:Texas Instruments

Description:CSD25213W10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD25213W10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Contact Plating	Copper, Silver, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-UFBGA, DSBGA
Number of Pins	4
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	BALL
Base Part Number	CSD25213
Number of Channels	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Operating Mode	-0.85
Power Dissipation	1W
Turn On Delay Time	510 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	47m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	478pF @ 10V
Current - Continuous Drain (Id) @ 25°C	1.6A Ta
Gate Charge (Qg) (Max) @ Vgs	2.9nC @ 4.5V
Rise Time	520ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Fall Time (Typ)	970 ns
Turn-Off Delay Time	1 μs
Continuous Drain Current (ID)	-1.6A
Gate to Source Voltage (Vgs)	-6V
Drain to Source Breakdown Voltage	-20V
Max Junction Temperature (Tj)	150°C
Height	625μm
Length	0m
Width	0m
Thickness	650μm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free