CSD75208W1015 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available on our website
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CSD75208W1015 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-UFBGA, DSBGA
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
NexFET™
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation
750mW
Terminal Position
BOTTOM
Terminal Form
BALL
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
CSD75208
Number of Elements
2
Number of Channels
2
Operating Mode
ENHANCEMENT MODE
Turn On Delay Time
9 ns
FET Type
2 P-Channel (Dual) Common Source
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
68m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
410pF @ 10V
Current - Continuous Drain (Id) @ 25°C
1.6A
Gate Charge (Qg) (Max) @ Vgs
2.5nC @ 4.5V
Rise Time
5ns
Drain to Source Voltage (Vdss)
20V
Fall Time (Typ)
11 ns
Turn-Off Delay Time
29 ns
Continuous Drain Current (ID)
-1.6A
Threshold Voltage
-800mV
Gate to Source Voltage (Vgs)
-6V
Drain-source On Resistance-Max
0.15Ohm
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Feedback Cap-Max (Crss)
10 pF
Height
1mm
Length
1.5mm
Width
1.8mm
Thickness
2mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.082520
$1.08252
10
$1.021245
$10.21245
100
$0.963439
$96.3439
500
$0.908905
$454.4525
1000
$0.857457
$857.457
CSD75208W1015 Product Details
CSD75208W1015 Description
The device is designed to provide the lowest on-resistance and gate charge in the smallest possible shape and has excellent thermal characteristics in ultra-low profile. Low on-resistance, coupled with a small footprint and compact shape, make the device ideal for battery-powered applications with limited space.