CSD86311W1723

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CSD86311W1723

Manufacturer part number:CSD86311W1723

Manufacturer:Texas Instruments

Description:CSD86311W1723 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD86311W1723 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	12-UFBGA, DSBGA
Number of Pins	12
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Max Power Dissipation	1.5W
Terminal Position	BOTTOM
Terminal Form	BALL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD86311
Pin Count	12
Qualification Status	Not Qualified
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Turn On Delay Time	5.4 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	39m Ω @ 2A, 8V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	585pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Rise Time	4.3ns
Drain to Source Voltage (Vdss)	25V
Fall Time (Typ)	2.9 ns
Turn-Off Delay Time	13.2 ns
Continuous Drain Current (ID)	4.5A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	10V
Drain-source On Resistance-Max	0.051Ohm
Drain to Source Breakdown Voltage	25V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	1 V
Feedback Cap-Max (Crss)	13 pF
Height	625μm
Length	0m
Width	0m
Thickness	375μm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead